Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2008-10-02
2011-11-01
Andujar, Leonardo (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C438S109000, C257SE23141, C257SE21001
Reexamination Certificate
active
08049341
ABSTRACT:
A stacked semiconductor package and a method for manufacturing the same are presented which exhibit a reduced electrical resistance and an increased junction force. The semiconductor package includes at least two semiconductor chips stacked upon each other. Each semiconductor chip has a plurality of bonding pads formed on upper surfaces and has via-holes. First wiring lines are located on the upper surfaces of the semiconductor chips, on the surfaces of the via-holes, and respectively connected onto their respective bonding pads. Second wiring lines are located on lower surfaces of the semiconductor chips and on the surfaces of the respective via-holes which connect to their respective first wiring lines. The semiconductor chips are stacked so that the first wiring lines on an upper surface of an upwardly positioned semiconductor chip are respectively joined with corresponding second wiring lines formed on a lower surface of a downwardly positioned semiconductor chip.
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Kim Jong Hoon
Lee Seung Hyun
Suh Min Suk
Yang Seung Taek
Andujar Leonardo
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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