Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Beam leads
Reexamination Certificate
2005-01-11
2005-01-11
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Beam leads
C257S698000, C257S738000
Reexamination Certificate
active
06841872
ABSTRACT:
A semiconductor package and a fabrication method thereof can enhance adhesion between a solder and a package body by employing an irregular metal pattern, and improve stability. The semiconductor package includes a semiconductor substrate; a plurality of chip pads separately formed on an upper surface of the semiconductor substrate; an irregular metal pattern electrically connected to the plurality of chip pads; and an external terminal electrically connected to the metal pattern. In addition, a method of fabricating the semiconductor package includes the steps of separately forming a plurality of chip pads on an upper surface of a semiconductor substrate; forming an irregular metal pattern electrically connected to the plurality of chip pads; and forming an external terminal electrically connected to the metal of chip pads; and forming an external terminal electrically connected to the metal pattern.
REFERENCES:
patent: 6181569 (2001-01-01), Chakravorty
patent: 6235552 (2001-05-01), Kwon
patent: 6268642 (2001-07-01), Hsuan et al.
patent: 6278171 (2001-08-01), Arndt et al.
patent: 6291259 (2001-09-01), Chun
patent: 6291897 (2001-09-01), Wark et al.
Ha Seong-Kweon
Kim Jong-Hun
Farahani Dana
Hynix / Semiconductor Inc.
Pham Long
Piper Rudnick LLP
LandOfFree
Semiconductor package and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor package and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor package and fabrication method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3378054