Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1996-03-29
1998-02-03
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257700, H01L 2352
Patent
active
057148015
ABSTRACT:
A semiconductor package is disclosed which is provided with a multilayer ceramic substrate such as, for example, a multilayer aluminum nitride substrate having a surface for mounting a semiconductor device and, at the same time, having an inner wiring layer electrically connected to the semiconductor device. On the surface of the multilayer ceramic substrate for forming terminals thereon, input and output terminals such as, for example, pin terminals and bump terminals electrically connected to the inner wiring layer. The input and output terminals embrace signal terminals, ground terminals, and power source terminals. The signal terminals among other terminals are so disposed that they may be each positioned adjacently to at least one ground terminal or power source terminal. This semiconductor package possesses perfect transmission properties even for signals of such a high frequency as exceeds the order of GHz. The dispersion of the transmission properties is small.
REFERENCES:
patent: 5309024 (1994-05-01), Hirano
patent: 5543661 (1996-08-01), Sumida
Iyogi Kiyoshi
Kudo Jun-ichi
Yamakawa Koji
Yano Keiichi
Clark S. V.
Kabushiki Kaisha Toshiba
Saadat Mahshid D.
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