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2011-06-28

2011-06-28

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S502000, C257S621000, C257S698000

Reexamination Certificate

active

07968918

ABSTRACT:
A semiconductor package includes a semiconductor chip having two or more regions that partially overlap so as to define an overlapping region. Through-holes are defined through the two or more partially overlapping regions. One or more first electrodes are disposed on inner surfaces of the semiconductor chip within the through-holes. One or more second electrodes are disposed so as to be insulated from the first electrodes. The one or more second electrodes are at least partially disposed in the overlapping region. Insulation members are disposed in the through-holes.

REFERENCES:
patent: 5438212 (1995-08-01), Okaniwa
patent: 6916685 (2005-07-01), Yang et al.
patent: 7355267 (2008-04-01), Kirby et al.
patent: 2007/0138617 (2007-06-01), Knighten et al.
patent: 2007/0215985 (2007-09-01), Chen

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