Semiconductor oxidation apparatus and method of producing...

Semiconductor device manufacturing: process – Including control responsive to sensed condition

Reexamination Certificate

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C438S006000, C438S007000, C438S008000, C438S009000, C438S010000, C438S011000, C438S012000, C438S013000, C438S014000, C438S016000, C438S017000, C438S018000, C438S400000, C438S432000

Reexamination Certificate

active

07981700

ABSTRACT:
A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part.

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Oct. 31, 2007 Korean official action (and English translation thereof) in connection with corresponding Korean application No. 10-2006-7021340.
Zenno, et al. “Development of New Oxidation Apparatus for Manufacturing Surface-Emitting Lasers”, Optical Alliance, pp. 42-46, Apr. 2004 (including partial English translation of Development of Improved Proto Apparatus).
Choquette, et al., “Advances in Selective Wet Oxidation of AlGaAs Alloys”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 3, No. 3, Jun. 1997, pp. 916-925.
Feld, et al., “In SituOptical Monitoring of AlAs Wet Oxidation Using a Novel Low-Temperature Low-Pressure Steam Furnace Design”, IEEE Photonics Technology Letters, vol. 10, No. 2, Feb. 1998, pp. 197-198.
Oct. 18, 2010 European search report in connection with counterpart European patent application No. 06714039.

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