Semiconductor optoelectronic waveguide

Details Semiconductor optoelectronic waveguide Semiconductor optoelectronic waveguide

2004-10-04

2009-10-06

Le, Uyen Chau N (Department: 2874)

Optical waveguides

Planar optical waveguide

Thin film optical waveguide

C385S001000, C385S002000, C385S003000

Reexamination Certificate

active

07599595

ABSTRACT:
The present invention relates to a semiconductor optoelectronic waveguide having a nin-type hetero structure which is able to stably operate an optical modulator. On the upper and lower surfaces of the core layer determined for the structure so that electro-optical effects are effectively exerted at an operating light wavelength and are provided with intermediate clad layers having a band gap which is greater than that of the core layer11. Respectively on the upper and the lower surface of the intermediate clad layer are provided the clad layers having the band gap which is greater than those of the intermediate clad layers. On the upper surface of the clad layer are sequentially laminated a p-type layer and an n-type layer. In the applied voltage range used under an operating state, a whole region of the p-type layer and a part or a whole region of the n-type layer are depleted.

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