Semiconductor optoelectronic switch and method for driving the s

Details Semiconductor optoelectronic switch and method for driving the s Semiconductor optoelectronic switch and method for driving the s

1993-07-20

1995-05-09

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257 85, 257198, 257 98, 257462, H01L 3112, H01L 3116

Patent

active

054142822

ABSTRACT:
The invention provides a heterostructure optoelectronic switching device showing a switch operation in response to a light injection for a subsequent light emission. The switching device comprises a pair of first and second bipolar transistors made of semiconductors showing a direct band-to-band transition. Each of the first and second bipolar transistors comprises collector and emitter layers and a base layer having a narrower energy band gap than energy band gaps of the collector and emitter layers. The base layers of the first and second bipolar transistors are connected to the collector layers of the second and first bipolar transistors respectively to allow the device to have a positive feedback feature. The emitter layers of the first and second bipolar transistors are connected to a first terminal. The collector layers of the first and second bipolar transistors are connected respectively through first and second resistors to a second terminal applied with a voltage higher than a voltage applied to the first terminal.

REFERENCES:
patent: 3564300 (1971-02-01), Henle
patent: 3686645 (1972-08-01), Brojdo
patent: 4160258 (1979-07-01), Dawson et al.
patent: 4573064 (1986-02-01), McLevige et al.
patent: 4672414 (1987-06-01), Gabriel et al.
patent: 5041882 (1991-08-01), Katoh
patent: 5216538 (1993-06-01), Twynam
K. Kasahara et al, "Double heterostructure optoelectronic switch as a dynamic memory with low-power consumption", 1988 American Institute of Physics, Feb. 29, 1988, pp. 679-681.

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