Semiconductor optoelectronic device with electrically...

Details Semiconductor optoelectronic device with electrically... Semiconductor optoelectronic device with electrically...

2005-09-13

2005-09-13

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S184000

Reexamination Certificate

active

06943384

ABSTRACT:
The invention concerns an optoelectronic device comprising at alteration of at least three semiconductor layers with selected shape, and two air layers. The semiconductor layers having N-type or P-type doping which may differ or not from one layer to the next layer, are separated by spacers whereof the doping is non-intentional (I-type) or intentional (N-type or P-type) to define a PINIP or NIPIN structure with air cavities, and are adapted to be set at selected respective electric potentials. The respective thicknesses and compositions of the layers and the spacers are selected so that the structure has at least an optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.

REFERENCES:
patent: 4600935 (1986-07-01), Dresner
patent: 5629951 (1997-05-01), Chang-Hasnain et al.
patent: 5771253 (1998-06-01), Chang-Hasnain et al.
patent: 6646318 (2003-11-01), Hopper et al.

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