Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Patent
1996-03-29
1999-01-26
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
257627, 257 77, 257 94, 257 99, 372 43, H01L 3300, H01S 319
Patent
active
058641718
ABSTRACT:
The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a <11-20> orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.
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Fujimoto Hidetoshi
Ishikawa Masayuki
Kokubun Yoshihiro
Nishikawa Yukie
Rennie John
Jackson Jerome
Kabushiki Kaisha Toshiba
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