Semiconductor opto-electronic switch

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 4, 357 55, 357 58, 250211J, H01L 2712, H01L 2906, H01L 2904, H01L 2714

Patent

active

044941323

ABSTRACT:
An opto-electronic switch component which comprises two regions of good conductivity separated by a gap on a normally non-conductive substrate. When the gap is irradiated, the conductivity of the substrate increases and a connection is formed between the two regions.

REFERENCES:
patent: 3700980 (1972-10-01), Belasco et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4281208 (1981-07-01), Kuwano et al.
patent: 4347526 (1982-08-01), Elliott
patent: 4376285 (1983-03-01), Leonberger et al.
patent: 4396833 (1983-08-01), Pan

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor opto-electronic switch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor opto-electronic switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor opto-electronic switch will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1484090

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.