Semiconductor optical waveguide device, optical control type opt

Details Semiconductor optical waveguide device, optical control type opt Semiconductor optical waveguide device, optical control type opt

1995-09-11

1998-05-19

Palmer, Phan T. H.

Optical waveguides

Directional optical modulation within an optical waveguide

Light intensity dependent

385 16, 385131, G02F 1295

Patent

active

057547149

ABSTRACT:
A semiconductor optical waveguide device comprises a stripe-shaped semiconductor optical waveguide, part of the semiconductor optical waveguide being an active layer producing gain by electric current injection, and part of the semiconductor optical waveguide being an intra-band resonant absorption layer in which an intra-band absorption resonant wavelength is arranged within the gain band of the active layer, and means for injecting electric current into the active layer.

REFERENCES:
patent: 4755015 (1988-07-01), Uno et al.
patent: 5155737 (1992-10-01), Ikeda et al.
patent: 5191630 (1993-03-01), Tajima
patent: 5315422 (1994-05-01), Utaka et al.
Fifth Optoelectronics Conference (Dec. '94) Technical Digest, Paper 13E2-2; "Light-Controlled Optical Modulation Using Three Energy Levels in Undoped Quantum Well Structure", Susumu Noda, et al. pp. 92-93, Jul. 1994.
Electron Intersubband Transistions to 0.8 eV (1.55 .mu.m) in InGaAs/AlAs Single Quantum Wells, by J. H. Smet, L. H. Peng, Y. Hirayama, and C. G. Fonstad; Appl. Phys. Lett. vol. 64, No. 8, Feb. 21, 1994.
Feasibility of 1.55 .mu.m Intersubband Photonic Devices Using InGaAs/AlAs Pseudomorphic Quantum Well Structures, Yuzo Hirayama, Jurgen H. Smet, Lung-Han Peng, Clifton G. Fonstad and Erich P. Ippen, Jpn. J. Appl., Phys., vol. 33 (1994), pp. 890-895 Jan. 1994.

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