Semiconductor optical waveguide and method of fabricating the sa

Details Semiconductor optical waveguide and method of fabricating the sa Semiconductor optical waveguide and method of fabricating the sa

1997-05-13

1999-04-06

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 22, 438 29, H01L 2120, G02B 610

Patent

active

058917489

ABSTRACT:
On an n-InP substrate (101), a mask (102) having a first portion (102a) and a second portion (102b) is formed. The mask (102) has a first gap (NG) at the first portion (102a). A width of the second portion (102b) is greater than a width of the first portion (102a). A core layer (120) is epitaxially grown selectively on the substrate (101) at an area corresponding to the first gap (NG). The first gap (NG) is widened and an additional gap (AG) is formed at the second portion (102b) to form a second gap (WG) comprising the first gap after widened and the additional gap (AG). A clad layer (106) is epitaxially grown on the substrate (101) at an area corresponding to the second gap (WG) so as to cover the core layer(120). A difference in width between the first portion (102a) and the second portion (102b) is set so that a thickness of the clad layer at an area corresponding to the second portion (102b) becomes equal to a thickness of the clad layer (106) at an area corresponding to the first portion (102a). A structure of the semiconductor optical waveguide comprising a window structure region in which the reflection of the guided light is small is provided with good controllability and reliability and with high yield.

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M. Aoki et al., Chirp Characteristics of an 1.55 .mu.m DFB Laser Integrated Electroabsorption Modulator:, 1993 Autumn Conference C-96 of the Institute of Electronics, Information and Communication Engineers (in Japanese with English abstract) (no month).
M. Aoki et al., "InGaAs/InGaAsP MOW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993.
T. Kato et al., "Low Penalty Transmission Characteristics of Packaged DFB-LD Modulator Integrated Light Source with Selectively Grown Window-Facet Structure Fabricated by Bandgap Energy Controlled Selective MOVPE", 1994 Vernal Congress C-226 of the Institute of Electronics, Information and Communication Engineers (in Japanese with English abstract) (no month).
T. Kato et al., "DFB-LD/Modulator Integrated Light Source by Bandgap Energy Controlled Selective MOVPE", Electronics Letters 16th Jan. 1992, vol. 28, No. 22, pp. 153-154.

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