Optical waveguides – Planar optical waveguide – Thin film optical waveguide
Patent
1996-03-29
1997-10-21
Palmer, Phan T. H.
Optical waveguides
Planar optical waveguide
Thin film optical waveguide
385129, 385132, 372 45, 372 50, 359248, 257 94, 257 14, G02B 610
Patent
active
056789351
ABSTRACT:
On an n-InP substrate (101), a mask (102) having a first portion (102a) and a second portion (102b) is formed. The mask (102) has a first gap (NG) at the first portion (102a). A width of the second portion (102b) is greater than a width of the first portion (102a). A core layer (120) is epitaxially grown selectively on the substrate (101) at an area corresponding to the first gap (NG). The first gap (NG) is widened and an additional gap (AG) is formed at the second portion (102b) to form a second gap (WG) comprising the first gap after widened and the additional gap (AG). A clad layer (106) is epitaxially grown on the substrate (101) at an area corresponding to the second gap (WG) so as to cover the core layer (120). A difference in width between the first portion (102a) and the second portion (102b) is set so that a thickness of the clad layer at an area corresponding to the second portion (102b) becomes equal to a thickness of the clad layer (106) at an area corresponding to the first portion (102a). A structure of the semiconductor optical waveguide comprising a window structure region in which the reflection of the guided light is small is provided with good controllability and reliability and with high yield.
REFERENCES:
patent: 4820655 (1989-04-01), Noda et al.
"Chirp Characteristics of an 1.55 .mu.m DFB Laser Integrated Electroabsorption Modulator", M. Aoki et al., 1993 No Month Autumn Conference C-96 of the Institute of Electronics, Information and Communication Engineers.
"Low Penalty Transmission Characteristics of Packaged DFB-LD/Modulator Integrated Light Source with Selectively Grown Window-Facet Structure Fabricated by Bandgap Energy Controlled Selective MOVPE", T. Kato et al. 1994 Vernal Congress C-226 of the Institute of Electronics, Information and Communication Engineers. No Month.
"DFB-LD/Modulator Integrated Light Source by bandgap Energy Controlled Selective MOVPE", T. Kato et al., reprinted by Electronics Letters, Jan. 16, 1992, vol. 28, No. 2, pp. 153-154.
"InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD", M. Aoki et al., IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 2088-2096.
NEC Corporation
Palmer Phan T. H.
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