Semiconductor optical waveguide

Optical waveguides – Planar optical waveguide – Thin film optical waveguide

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385 2, 385 14, G02B 610

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active

056824556

ABSTRACT:
A channel waveguide structure which can be incorporated into VLSI (very large scale integration) integrated circuits uses a SiGe (silicon germanium) alloy core and Si (silicon) top and bottom cladding layers. The core may consist of only a SiGe alloy layer or it may be formed as a superlattice containing Si layers alternating with SiGe alloy layers. LOCOS (locally oxidized silicon) regions are formed on the top cladding layer at spaced locations thereby defining lateral boundaries of channels in the core.

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patent: 5574289 (1996-11-01), Aoki et al.
Richard A. Soref "Silicon-Based Optoelectronics" Dec. 1993 pp. 1687-1706 Proceedings of the IEEE, vol. 81. No. 12.
F. Namavar "Optical waveguiding in Si/Si.sub.1-x Ge.sub.x /Si hetero-structures" Sep. 1991 pp. 3370-3372 J.Appl. Phys. 70 (6).

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