Semiconductor optical switch

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350 9614, 357 4, 357 30, G02F 1015

Patent

active

047952253

ABSTRACT:
An optical switch is disclosed in which a switching section for switching the optical path of an incident light is formed in a region where two semiconductor optical waveguides cross each other. The switching section is composed of n-, i-, p-, i- and n-type semiconductor layers laminated in that order, each i-type layer being formed by a superlattice layer composed of a plurality of semiconductor thin films so that the i-type layer is higher in the effective refractive index and smaller in the effective energy gap than each n-type layer. The impurity concentrations of the n-, i-, p-, i-, and n-type layers and the thicknesses of the i-, p-, and i-type layers are determined so that the i-, p- and i-type layers are depleted in a thermal equilibrium state.

REFERENCES:
patent: 4737003 (1988-04-01), Matsumura et al.
Wa et al., "All Optical Multiple-Quantum-Well Waveguide Switch," Electronics Lett., vol. 21, No. 1, Jan. 1985, pp. 26-28.
Ishida et al., "InGaAsP/InP Optical Switches Using . . . ", Appl. Phys. Lett., vol. 50, No. 3, Jan. 1987, pp. 141-142.

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