Semiconductor optical sensor having an inter-region...

Details Semiconductor optical sensor having an inter-region... Semiconductor optical sensor having an inter-region...

2008-03-14

2011-11-01

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C438S048000, C257SE33076, C257S294000, C257S187000, C257S184000, C257S257000, C257S291000

Reexamination Certificate

active

08049291

ABSTRACT:
A sensor includes a substrate provided with a circuit element forming region and a photodiode forming region, the substrate having a silicon substrate, an insulating layer on the silicon substrate, and a silicon layer on the insulating layer; a photodiode in the silicon layer; a circuit element in the silicon layer; a first interlayer insulating film formed over the silicon layer; a first light-shielding film on the first interlayer film and having an opening in the photodiode forming region; and a first inter-region light-shielding plug arranged between the two regions, for connecting the silicon substrate and the first light-shielding film.

REFERENCES:
patent: 6380572 (2002-04-01), Pain et al.
patent: 2005/0087781 (2005-04-01), Kuwazawa et al.
patent: 07162024 (1995-06-01), None
patent: 09293847 (1997-11-01), None

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