Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2011-01-25
2011-01-25
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S199000, C257S481000, C257S603000, C257SE31063
Reexamination Certificate
active
07875905
ABSTRACT:
A semiconductor optical receiver device is provided, which a mesa comprising a plurality of semiconductor crystal layers formed on a semiconductor substrate including a pn junction having a first conductive semiconductor crystal layer and a second conductive semiconductor crystal layer and including a first contact layer on the semiconductor substrate, a plurality of electrodes to apply electric field to the pn junction are coupled on the semiconductor substrate, a second contact layer is formed on a buried layer in which the mesa is buried, and the electric field is applied to the pn junction through the first and second contact layers.
REFERENCES:
patent: 4742378 (1988-05-01), Ito et al.
patent: 61-001064 (1986-01-01), None
patent: 2002-324911 (2002-11-01), None
patent: 2004-179404 (2004-06-01), None
Japanese Office Action issued in Japanese Patent Application No. JP 2007-111617 dated Oct. 19, 2010.
Kamiyama Hiroyuki
Komatsu Kazuhiro
Toyonaka Takashi
Jackson, Jr. Jerome
McDermott Will & Emery LLP
Opnext Japan, Inc.
Page Dale
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