Semiconductor optical modulator and laser with optical...

Details Semiconductor optical modulator and laser with optical... Semiconductor optical modulator and laser with optical...

2006-05-02

2006-05-02

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular beam control device

Modulation

C359S237000, C372S045010, C372S045011, C372S045012

Reexamination Certificate

active

07039078

ABSTRACT:
In a semiconductor optical modulator of this invention, each quantum-well layer and each barrier layer of a quantum-well structure serving as a light absorption layer are respectively made of In1-X-YGaXAlYN (0≦X, Y≦1, 0≦X+Y≦1) and In1-X′-Y′GaX′AlY′N (0≦X′, Y′≦1, 0≦X′+Y′≦1). An electric field is being generated in the light absorption layer by spontaneous polarization.

REFERENCES:
patent: 5671242 (1997-09-01), Takiguchi et al.
patent: 5923688 (1999-07-01), Nakamura
patent: 5963358 (1999-10-01), Shields
patent: 6526083 (2003-02-01), Kneissl et al.
patent: 2352326 (2001-01-01), None
patent: 08-086978 (1996-04-01), None
patent: 10-294532 (1998-11-01), None
patent: 2002-176196 (2002-06-01), None
patent: WO 98/10544 (1998-03-01), None
patent: WO 00/76004 (2000-12-01), None
patent: WO 01/06286 (2001-01-01), None
Bernardini et al., “Spontaneous polarization and piezoelectric constants of III-V nitrides”, Phys. Rev. B, 56 (1997) R10024.
Osamura et al., “Fundamental absorption edge GaN, InN and their alloys”, Solid State Comm., 11(1972)617.
Puychevrier et al., “Synthesis of III-V semiconductor nitrides by reactive cathodic sputtering”, Thin Solid Films, 36(1976)141.
Tansley et al., “Optical band gap of indium nitride”, J Appl. Phys., 59(1986)3241.
Matsuoka et al., “Wide-Gap Semiconductor (In, Ga) N”, International Symposium on GaAs and Related Compounds, (Karuizawa, Japan, 1989); in Inst. Phys. Conf. Ser., 106. pp. 141-146.
Matsuoka, “Phase Separation in Wurtzite In1-x-yGaxAlyN”,MRS Internet J. Nitride Semicond. Res. 3,54(1998).
Matsuoka et al., “Optical Bandgap Energy of InN”, Extended Abstracts(the 36thMeeting); The Japan Society of Applied Physics and Related Societies, pp. 270 (1p-ZN-9) (1998).
Matsuoka et al., “Optical Bandgap Energy of InN”, Extended Abstracts(the 49thSpring Meeting, 2002); The Japan Society of Applied Physics and Related Societies, pp. 392 (29p-ZM-1).
“Physics of high-power InGaN/GaN lasers”, J. Piprek, et al, IEE Proceedings-Optoelectronics IEE UK, vol. 49, No. 4, Aug. 4, 2002, pp. 145-151.
“Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure”, Japanese Journal of Applied Physics, Part 2, vol. 38, No. 8B, Aug. 15, 1999, pp. L914-L916.

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