Semiconductor optical modulator

Details Semiconductor optical modulator Semiconductor optical modulator

2007-10-24

2011-10-04

Healy, Brian (Department: 2883)

Optical waveguides

Temporal optical modulation within an optical waveguide

Electro-optic

C385S001000, C385S014000, C385S131000, C385S141000

Reexamination Certificate

active

08031984

ABSTRACT:
The present invention can provide an npin-type optical modulator that has a high withstand voltage and is easily fabricated. A semiconductor optical amplifier (10) according to an embodiment of the present invention is an npin-type semiconductor optical modulator in which layers are sequentially stacked, with a cathode layer (12-1) arranged on the substrate side, including at least a first n-type cladding layer (13-1), a p-type cladding layer (14), a core layer (17) and a second n-type cladding layer (13-2). In this semiconductor optical modulator, the p-type cladding layer (14) is electrically connected to an electrode (18-1) of the cathode layer. Accordingly, the accumulation of holes in the p-type cladding layer associated with light absorption in the npin-type optical modulator can be absorbed in the electrode on the negative side. This npin-type semiconductor optical modulator can be comparatively easily fabricated using conventional semiconductor manufacturing techniques by adopting a mesa type waveguide structure.

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