Semiconductor optical modulator

Details Semiconductor optical modulator Semiconductor optical modulator

1994-03-14

1996-05-28

Epps, Georgia Y.

Optical: systems and elements

Optical modulator

Light wave temporal modulation

257 17, G02F 103

Patent

active

055217427

ABSTRACT:
A semiconductor optical modulator includes a light absorbing layer having a multi-quantum well structure including two quantum wells including quantum well layers bounded and separated by barrier layers, the quantum wells having respective, different .DELTA.Ev/.DELTA.Ec ratios where .DELTA.Ec is the discontinuity between the barrier layer and a quantum well layer in the conduction band edge and .DELTA.Ev is the discontinuity between the barrier layer and a quantum well layer in the valence band edge. By this construction, the absorption peak when no electric field is applied significantly shifts toward the longer wavelength side, resulting in a large difference between the absorption peak wavelength when no electric field is applied and the absorption peak wavelength when an electric field is applied, whereby the absorption loss of a semiconductor optical modulator when no electric field is applied is reduced.

REFERENCES:
patent: 5210428 (1993-05-01), Goossen
Mendez et al, "Stark Localization In GaAs-GaAlAs Superlattices Under An Electric Field", Physical Review Letters, vol. 60, No. 23, Jun. 1988, pp. 2426-2429.

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