Coherent light generators – Particular active media – Semiconductor
Patent
1997-03-17
1998-08-04
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 45, 385 14, 385129, 385130, 385131, 385132, 257 94, 257 96, 257 97, 438 31, 438 47, H01S 319, G02B 612, G02B 610, H01L 3300
Patent
active
057905800
ABSTRACT:
The invention provides a semiconductor optical integrated device which includes (a) a semiconductor layer, (b) a plurality of masks formed on the semiconductor layer, each of the masks having a shape varying in an axial direction of a light waveguide, and (c) quantum well structure selectively grown on the semiconductor layer by metal organic vapor phase epitaxy (MOVPE). The quantum well structure includes a well layer having a thickness and a bandgap wherein at least one of the thickness and bandgap in a region is different from those in another regions, a shape of said masks in the region being different from that in the another regions. The invention provides many advantages, one of which is that light waveguides having different bandgaps from one another can be formed on a common plane by single selective growth. This makes it possible to communicate regions to one another with high optical coupling ratio.
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"DFB-LD/Modulator Integrated Light Source by Bandgap Energy Controlled Selective MOVPE," Kato et al., Electronics Letters, vol. 28, No. 2, Jan. 16, 1992, pp. 153 and 154.
Ae Satoshi
Nakamura Takahiro
Sakata Yasutaka
Bovernick Rodney B.
Leung Quyen Phan
NEC Corporation
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