Fishing – trapping – and vermin destroying
Patent
1995-03-08
1998-06-23
Kunemund, Robert
Fishing, trapping, and vermin destroying
437110, 437129, H01L 2120
Patent
active
057704660
ABSTRACT:
A semiconductor optical monolithic integration device has a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. The epitaxial layers in the active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in the active region except in the passive region. The first mask pattern has a variation in width along the waveguide direction. The epitaxial layers are simultaneously and non-selectively grown on an entire surface of the passive region by the metal organic vapor phase epitaxy and the epitaxial layers have a mesa structure in the active region and a plane structure in the passive region. A cladding layer having a ridged structure is selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in the active and passive regions. The second mask pattern has a constant width. In the active region, the ridged cladding layer completely embeds the mesa structure epitaxial layers and in the passive region the ridged cladding layer are provided on the plane structure epitaxial layers.
REFERENCES:
patent: 4961198 (1990-10-01), Ishino et al.
patent: 5250462 (1993-10-01), Sasaki et al.
patent: 5284791 (1994-02-01), Sakata et al.
patent: 5347526 (1994-09-01), Suzuki et al.
patent: 5358896 (1994-10-01), Komatsu et al.
patent: 5384797 (1995-01-01), Welch et al.
patent: 5432123 (1995-07-01), Dentai et al.
patent: 5436195 (1995-07-01), Kimura et al.
patent: 5450437 (1995-09-01), Shim et al.
Colas et al., E., "In Situ Definition of Semiconductor Structures by Selective Area Growth and Etching", Applied Physic Letters, Oct. 14, 1991, vol. 59, No. 16, pp. 2019-2021.
Yamaguchi et al., M., "Semiconductor Photonic Integrated Circuit for High-Density WDM Light Source", K-1, pp. 160-161, 12.sup.th IEEE Int'l Semiconductor Conference.
Murata et al., S., "Over 720 GHz (5.cndot.8nm) Frequency Tuning by A 1.cndot.5 .mu.m DBR Laser with Phase and Bragg Wavelength Control Regions", Electronic Letters, Apr. 9, 1987, vol. 23, No. 8, pp. 403-405.
Koren et al., U., "Wavelength Division Multiplexing Light Source with Integrated Quantum Well Tunable Lasers and Optical Amplifiers", Appl. Phys. Lett., May 22, 1989, vol. 54, No. 21, pp. 2056-2058.
Hernandez-Gil et al., F., "Tunable MQW-DBR Laser with Monolithically Integrated GaInAsP/InP Directional Coupler Switch", Electronic Letters, Sep. 14, 1989, vol. 25, No.19, pp. 1271-1272.
Takeuchi et al., H., "Monolithic Integrated Coherent Receiver on InP Substrate", IEEE Photonics Technology Letters, Nov. 1989, vol. 1, No. 11, pp. 398-400.
Aoki et al., M., "Novel Structure MQW Electroabsorption Modulator/DFB-Laser Integrated Device Fabricated by Selective Area MOCVD Growth", Electronic Letters, Nov. 7, 1991, vol. 27, No. 23, pp. 2138-2140.
Kato et al., T., "DFB-LD/Modulator Integrated Light Source by Bandgap Energy Controlled Selective MOVPE", Reprinted from Electronic Letters, Jan. 16, 1992, vol. 28, No. 2, pp. 153-154.
Janson et al., M., "Monolithically Integrated 2.times.2 InGaAsP/InP Laser Amplifier Gate Switch Arrays", Electronic Letters, Apr. 9, 1992, vol. 28, No. 8, pp. 776-778.
Zah et al., C., "1.cndot.5 .mu.m Compressive-Strained Multiquantum-Well 20-Wavelength Distributed-Feedback Laser Arrays", Electronic Letters, Apr. 23, 1992, vol. 28, No. 9, pp. 824-825.
Tanbun-Ek et al., T., "DFB Lasers with Monolithically Integrated Passive Waveguide", IEEE Photonics Technology Letters, Jul., 1992, vol. 4, No. 7, pp. 685-688.
Zah et al., C., "Monolithic Integration of Multiwavelength Compressive-Strained Multiquantum-Well Distributed-Feedback Laser Array with Star Coupler and Optical Amplifiers", Electronic Letters, Dec. 3, 1992, vol. 28, No. 25, pp. 2361-2362.
T. Sasaki et al., "Monolithically integrated multi-wavelength MQW-DBR laser diodes fabricated by selective metalorganic vapor phase epitaxy," Journal of Crystal Growth 145 (1994) pp. 846-851.
T. Kato et al., "DFB-LD/Modulator Integrated Light Source by Bandgap Energy Controlled Selective MOVPE," Electronics Letters, vol. 28, pp. 153-154, 16 Jan. 1992.
Hamamoto Kiichi
Kitamura Mitsuhiro
Kitamura Shotaro
Komatsu Keiro
Sakata Yasutaka
Kunemund Robert
NEC Corporation
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