Semiconductor optical image sensing device

Details Semiconductor optical image sensing device Semiconductor optical image sensing device

1976-02-12

1977-08-30

Heyman, John S.

Facsimile and static presentation processing

Facsimile

Recording apparatus

250578, 307208, 307220C, 307311, H04N 314, H03K 342, H01J 3912, H03K 2312

Patent

active

040458172

ABSTRACT:
A semiconductor optical image sensing device having a signal line connected to the drain electrodes of MOS field effect transistors each corresponding to a picture element, wherein the source electrodes of the MOS field effect transistors are connected to photo-diodes, capacitors of MOS structures are connected between the gate electrodes of the MOS field effect transistors and a noise line, and the signal line and the noise line are connected to input terminals of a differential amplifier. The capacitors of MOS structures are formed in the same way as the gates and drains of the MOS field effect transistors. By applying a scanning pulse to the gate electrodes of the MOS field effect transistors to scan the MOS field effect transistors for switching the same, a signal output and a noise output are produced from the signal line while another noise output is produced from the noise line. The signal to noise ratio can be enhanced by producing only the signal output from the differential amplifier.

REFERENCES:
patent: 3626193 (1971-12-01), Ishihara et al.
patent: 3662188 (1972-05-01), Williams
patent: 3717770 (1973-02-01), Dyck et al.
patent: 3904818 (1975-09-01), Kovac
Chai et al., "Noise Compensator for Charge-Coupled Devices"; IBM Tech. Discl. Bull.; vol. 16, No. 4, pp. 1099-1100; 9/1973.

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