Patent
1986-02-11
1988-11-22
Edlow, Martin H.
357 16, 357 4, H01L 3300
Patent
active
047869518
ABSTRACT:
A semiconductor optical element having a layer which exhibits a function of diffraction grating between a first cladding layer and a second cladding layer, wherein the layer which exhibits the function of diffraction grating consists of a superlattice layer in which crystal layers are periodically mixed to constitute a semiconductor grating layer.
REFERENCES:
patent: 4599728 (1986-07-01), Alavi
patent: 4616241 (1986-10-01), Biefeld
patent: 4654090 (1987-03-01), Burnham
Fujiwara Kenzo
Tokuda Yasunori
Edlow Martin H.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Semiconductor optical element and a process for producing the sa does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor optical element and a process for producing the sa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor optical element and a process for producing the sa will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-438220