Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-08-21
2007-08-21
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S011000, C257S012000, C257S013000, C257S022000, C257S037000, C257S053000, C257S079000, C257S086000, C257S094000, C257S096000, C257S097000, C257S101000, C257S102000, C257S183000, C257S190000, C257S201000
Reexamination Certificate
active
11263997
ABSTRACT:
A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content)guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.
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Hanamaki Yoshihiko
Kawasaki Kazushige
Ono Ken'ichi
Shibata Kimitaka
Shigihara Kimio
Leydig, Voit & Myer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
Soward Ida M.
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