Semiconductor optical element

Details Semiconductor optical element Semiconductor optical element

1990-09-27

1992-04-21

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 357 4, 357 16, 357 17, H01S 319

Patent

active

051075148

ABSTRACT:
A semiconductor optical element includes a quantum well structure having a crystalline well layer of (Al.sub.x Ga.sub.1-x).sub.1-z In.sub.z P.sub.y As.sub.1-y (O.ltoreq.x<1, O.ltoreq.y<1, O<z<1) having a lattice constant that matches crystalline InP and two barrier layers of crystalline (Al.sub.x' Ga.sub.1-x').sub.1-z In.sub.z P.sub.y As.sub.1-y (x<x'.ltoreq.1) having lattice constant that matches crystalline wherein and at least a portion of the quantum well structure is disordered.

REFERENCES:
patent: 4815087 (1989-03-01), Hayashi
patent: 4916708 (1990-04-01), Hayakawa
patent: 4932033 (1990-06-01), Miyazawa et al.
patent: 4961197 (1990-10-01), Tanaka et al.
patent: 4964134 (1990-10-01), Westbrook et al.
patent: 4974231 (1990-11-01), Gomyo
patent: 4982409 (1991-01-01), Kinoshita et al.
Gessner et al, "GaInAs/AlGaInAs . . . Pressure MOVPE", Electronics Letters, vol. 25, No. 8, Apr. 1989, pp. 516-517.

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