Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-09-26
2006-09-26
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C977S950000
Reexamination Certificate
active
07112455
ABSTRACT:
A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.
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Du Yang
Mathew Leo
Thean Voon-Yew
Baumeister B. William
Chiu Joanna G.
Freescale Semiconductor, INC
Hill Daniel D.
King Robert L.
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