Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2011-08-23
2011-08-23
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S081000, C257S082000, C438S022000, C438S024000
Reexamination Certificate
active
08003995
ABSTRACT:
A semiconductor optical device where the leak current due to the double injection of carriers may be suppressed and a simplified process to form the device are disclosed. The device10provides, on the n-type InP substrate, a mesa and a burying region formed so as to bury the mesa. The mesa includes the first cladding layer, the active layer, the tunnel junction layer and the second cladding layer on the n-type InP substrate in this order. The tunnel junction layer comprises an n-type layer coming in contact with the active layer and a p-type layer between the active layer and the n-type layer. The n-type layer has a carrier concentration higher than that of the second cladding layer, while, the p-type layer may have the band gap energy greater than that of the second cladding layer.
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Ortsiefer et al. “Low-resistance InGa(AI)As Tunnel Junctions for . . . Lasers”, Jpn. J. Appl. Phys., vol. 39, 2000, pp. 1727-1729.
Payen Marvin
Smith Bradley K
Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
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