Semiconductor optical device with suppressed double...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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C257S081000, C257S082000, C438S022000, C438S024000

Reexamination Certificate

active

08003995

ABSTRACT:
A semiconductor optical device where the leak current due to the double injection of carriers may be suppressed and a simplified process to form the device are disclosed. The device10provides, on the n-type InP substrate, a mesa and a burying region formed so as to bury the mesa. The mesa includes the first cladding layer, the active layer, the tunnel junction layer and the second cladding layer on the n-type InP substrate in this order. The tunnel junction layer comprises an n-type layer coming in contact with the active layer and a p-type layer between the active layer and the n-type layer. The n-type layer has a carrier concentration higher than that of the second cladding layer, while, the p-type layer may have the band gap energy greater than that of the second cladding layer.

REFERENCES:
patent: 2005/0083979 (2005-04-01), Leary et al.
patent: 2005/0253164 (2005-11-01), Bhat et al.
patent: 05-183229 (1993-07-01), None
N. Nishiyama et al, “High efficiency long wavelength VCSEL on InP grown by MOCVD”, Electronics Letters, Mar. 6, 2003, vol. 39, No. 5.
Sekiguchi et al., “Long wavelength GaInAsP/InP Laser . . . Junction”, Jpn. J. Appl. Phys., vol. 38, 1999, pp. L443-445.
Ortsiefer et al. “Low-resistance InGa(AI)As Tunnel Junctions for . . . Lasers”, Jpn. J. Appl. Phys., vol. 39, 2000, pp. 1727-1729.

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