Semiconductor optical device with mesa structure which is surrou

Details Semiconductor optical device with mesa structure which is surrou Semiconductor optical device with mesa structure which is surrou

1994-07-27

1997-08-19

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 318

Patent

active

056595654

ABSTRACT:
A semiconductor mesa structure including active, absorbing, or passive guide layer is surrounding laterally by insulating mask, and is buried by a cladding layer which extends over the insulating mask, and injected current flows through the cladding layer into the mesa structure without leakage from the cladding layer into a substrate so that the semiconductor optical device is improved in performance.

REFERENCES:
patent: 4077817 (1978-03-01), Bellavance
patent: 5237639 (1993-08-01), Kato et al.
patent: 5383216 (1995-01-01), Takemi
T. Sasaki et al., "Tunable DBR Laser Diodes with Selectively Grown Waveguide," Opto-Electronics Research Labs., NEC Corporation (1991). (No Month Available).
T. Kato et al., "Novel MOW-DBF-LD/Modulator Integrated Light Source Fabricated by Bandgap Energy Controlled MOVPE Selective Regrowing Technique," Opto-Electronics Research Labs., NEC Corporation (1991). (No Manth Available).
T. Sasaki et al., "Selective MOVPE Growth for Photonic Integration Circuits," OFC/IOOC '93 Technical Digest (1993), pp. 210-212. (No Month Available).
S. Kitamura et al., "Polarization-Insensitive Semiconductor Optical Amplifier Array Grown By Selective MOVPE," Opto-Electronics Research Labs., NEC Corporation. (No date Available).
T. Kato et al., "DFB-LD/Modulator Integrated Light Source by Bandgap Energy Controlled Selective MOVPE," Electronic Letters, vol. 28, No. 2 (Jan. 16, 1992), pp. 153-154.
Y. D. Galeuchet et al., "GaInAs/InP Selective Area Metalorganic Vapor Phase Epitaxy for One-Step-Grown Buried Low-Dimensional Structures," Journal of Applied Physics, vol. 68, No. 2 (Jul. 15, 1990), pp. 560-568.

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