Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-09-19
2006-09-19
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S080000, C257S096000
Reexamination Certificate
active
07109526
ABSTRACT:
A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 μm, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPpwith x≧0.48, y≦1−z−p, z≦0.05, p≧0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).
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M. Kondow, K. Uomi, A Niwa, T. Kitatani, S Watahiki, and Y. Yazawa, “A Novel Material of GaInNAs For Long-Wavelength-Range Laser Diodes With Excellent High-Temperature Performance,” 2419A International Conference On Solid State Devices & Materials, Aug. 21-Aug. 24, 1995, Yokohama, JP Aug. 21, 1995, Tokyo, JP, pp. 1016-1018.
French Search Report, Application No. 0308770, dated Jun. 16, 2004.
Alexandre Francois
Gauthier-Lafaye Olivier
Gentner Jean-Louis
Thedrez Bruno
Avonex Corporation
Nelms David
Nguyen Dao H.
Patterson & Sheridan LLP
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