Semiconductor optical device, method of forming contact in...

Details Semiconductor optical device, method of forming contact in... Semiconductor optical device, method of forming contact in...

2006-05-09

2006-05-09

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S094000, C257S099000, C257S102000, C257S103000

Reexamination Certificate

active

07042016

ABSTRACT:
A semiconductor optical device comprises a superlattice contact semiconductor region and a metal electrode. The superlattice contact semiconductor region has a superlattice structure. The superlattice contact semiconductor region includes a II–VI compound semiconductor region and a II–VI compound semiconductor layer. The II–VI compound semiconductor region contains zinc, selenium and tellurium, and the II–VI compound semiconductor layer contains zinc and selenium. The metal electrode is provided on said superlattice contact semiconductor region and the metal electrode is electrically bonded to the first II–VI compound semiconductor layer.

REFERENCES:
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patent: 6576933 (2003-06-01), Sugawara et al.
patent: 06-005920 (1994-01-01), None
patent: 06-310815 (1994-11-01), None
Takao Nakamura et al., Optronics (2000) No. 12, pp. 126-131 (partial translation).
Y. Fan et al., “Graded band gap ohmic contact to p-ZnSe”,Appl. Phys. Lett., 61 (26), Dec. 28, 1992, pp. 3160-3162.

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