Semiconductor optical device, manufacturing method for the same,

Details Semiconductor optical device, manufacturing method for the same, Semiconductor optical device, manufacturing method for the same,

1994-02-01

1996-06-04

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 19, 257 13, 257 85, 257 97, 372 45, H01L 3300, H01L 310312, H01S 319

Patent

active

055235921

ABSTRACT:
By i) forming a layered structure of an undoped single crystalline Si layer and single crystalline Si.sub.0.8 Ge.sub.0.2 mixed crystal layer on an n-Si(100) substrate, a second undoped single crystalline Si layer on it, and a p type hydrogenated amorphous Si.sub.1-B C.sub.B layer on it, iii) mounting an n-Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer and Si.sub.0.8 Ge.sub.0.2 layer, an undoped single crystalline Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer, and a p-Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer sequentially on it or iv) mounting an n type single crystalline Si layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si layer and Si.sub.0.8 Ge.sub.0.1 Sn.sub.0.1 layer, an undoped single crystalline Si layer, and a p type single crystalline Si layer sequentially on it, a semiconductor optical device is obtained.

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Mi, et al IEEE Trans. on Elec. Dev., vol. 39 No. 11 Nov. 92, "Room-Temp, on Si/Si.sub.1-x Ge.sub.x Quantum Wells".
Physical Review Letters, vol. 66, No. 10, "Well-Resolved Band-Edge Photoluminescence of Excitons Confined in Strained Si.sub.1-x Ge.sub.x Quantum Wells", J. C. Sturm, et al.
Appl. Phys. Lett. 60 (14). Apr. 6, 1992, "Photoluminescence from electron-hole plasmas confined in Si/Si.sub.1-x Ge.sub.x /Si quantum wells", Xiao, C. W. Liu, et al.

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