Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-06-12
2007-06-12
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S098000
Reexamination Certificate
active
10699127
ABSTRACT:
Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.
REFERENCES:
patent: 5262360 (1993-11-01), Holonyak, Jr. et al.
patent: 5327448 (1994-07-01), Holonyak, Jr. et al.
patent: 5403775 (1995-04-01), Holonyak, Jr. et al.
patent: 5493577 (1996-02-01), Choquette et al.
patent: 5496597 (1996-03-01), Soininen et al.
patent: 5550081 (1996-08-01), Holonyak, Jr. et al.
patent: 5581571 (1996-12-01), Holonyak, Jr. et al.
patent: 5719891 (1998-02-01), Jewell
patent: 6965626 (2005-11-01), Tatum et al.
patent: 2004/0099857 (2004-05-01), Song et al.
patent: 04-186787 (1992-03-01), None
patent: 11-008436 (1999-12-01), None
patent: 2000-151016 (2000-05-01), None
patent: 2000-332355 (2000-11-01), None
patent: 1020000033401 (2000-06-01), None
Sun Jin Yun., et al., “Large-Area Atomic Layer . . . and H20”, Journal of the Korean Physical Society, vol. 33, Nov. 1998, pp. S170-S174.
E. Hall, et al., “Selectively Etched Undercut Apertures . . . VCSELs”, IEEE Photonics Technology Letters, vol. 13, No. 2, Feb. 2001.
E.A. Buell, et al., “InP-based 1310-1550nm Lattice-matched VCSELs”, 0-7803-7105-Apr. 1, 2001 IEEE, pp. 447-449.
E. Hall et al., “Room-temperature, CW operation of lattice-matched long-wavelength VCSELs”, Electronics Letters 17th Aug. 2000, vol. 36, No. 17, pp. 1465-1467.
Sun Jin Yun, “Dependence of atomic layer-deposited . . . and AICI3”, J.Vac.Sci.Technol. A 15(6), Nov./Dec. pp. 2993-2997.
Makus Ortsiefer, et al., “90° C Continuous-Wave . . . Surface-Emitting Lasers”, IEEE Photonics Technology Letters, vol. 12, No. 11, Nov. 2000, pp. 1435-1437.
Han Won Seok
Ju Young Gu
Kim Jong Hee
Kwon O Kyun
Park Sang Hee
Blakely & Sokoloff, Taylor & Zafman
Electronics and Telecommunications Research Institute
Prenty Mark V.
LandOfFree
Semiconductor optical device having current-confined structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor optical device having current-confined structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor optical device having current-confined structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3818441