Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-05-23
1999-07-27
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, 257 15, 257 21, 257 22, 257190, H01L 310304, H01L 31036, H01L 29205, H01L 2915
Patent
active
059294620
ABSTRACT:
A semiconductor laser has a multiple-quantum well (MQW) structure overlying a first III-V compound semiconductor. The MQW includes a plurality of layer combinations including a strained well layer and a strained barrier layer, which are formed in a cyclic order. An ultra-thin intermediate film made of the first III-V compound semiconductor and having a thickness corresponding to from monoatomic layer to ten atomic layer is interposed between each strained well layer and each strained barrier layer. The intermediate film functions for preventing formation of mixed crystal formed between the well layer and the barrier layer, thereby improving current density threshold and other characteristics of the semiconductor laser.
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Kasukawa Akihiko
Ohkubo Michio
Yamanaka Nobumitsu
Jackson, Jr. Jerome
The Furukawa Electric Co. Ltd.
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