Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-01-03
2006-01-03
Sarkar, Asok Kumar (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S436000, C257S461000
Reexamination Certificate
active
06982469
ABSTRACT:
A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.
REFERENCES:
patent: 5561681 (1996-10-01), Nishimura
patent: 6011811 (2000-01-01), Oehlander et al.
patent: 6539039 (2003-03-01), Furushima
patent: 6664605 (2003-12-01), Akulova et al.
patent: 2003/0042495 (2003-03-01), Ogasawara et al.
patent: 2003/0067010 (2003-04-01), Iga et al.
patent: 197 47 996 (1997-10-01), None
patent: 1 139 526 (2001-10-01), None
patent: 61-290790 (1986-12-01), None
patent: 8-250806 (1996-09-01), None
patent: 9-214045 (1997-08-01), None
patent: 10-22579 (1998-01-01), None
European Search Report, Nov. 22, 2004, AER/P104292EP.
Lourdudoss S et al., “Semi-Insulating Epitaxial Layers for Optoelectronic Devices” Institute of Electrical and Electronics Engineers, 2000 International Semiconducting and Insulating Materials Conference. The Australian National University, Canberra, Australia, Jul. 3-7, 2000, IEEE, US, vol. CONF. 11, Jul. 3, 2000, pp. 171-178.
Geelen Van et al., “Ruthenium Doped High Power 1.48 MUM SIPBH Laser.” 1999 11th. International Conference on Indium Phosphide and Related Materials. Conference proceedings. IPRM DAVOS, May 16-20, 1999. IEEE, US, vol. Conf. 11, May 16, 1999, pp. 203-206.
Y. Toyoda, K. Wakita, “Phase Evaluation of Tensile Strained Quantum Well Modulators”, Extended Abstracts (The 62ndAutumn Meeting, 2001); The Japan Society of Applied Physics, Sep. 2001, 1 page and English translation.
S. Kondo, Y. Noguchi, K. Tsuzuki, M. Yuda, S. Oku, Y. Kondo, “Ru-doped Semi-Insulating InP buried InGaAIAs/InAIAs MQWs modulators”, Extended Abstracts (The 62ndAutumn Meeting, 2001); The Japan Society of Applied Physics, Sep. 2001, 1 page and English translation.
T. Suzuki, J.H. Noh, T. Arakawa, Y. Miyagi, K. Tada, “Electroabsortive characterization of five layer asymmetric coupled quantum well”, Extended Abstracts (The 62ndAutumn Meeting, 2001); The Japan Society of Applied Physics, Sep. 2001, 1 page and English translation.
S. Kondo, Y. Noguchi, K. Tsuzuki, M. Yuda, S. Oku, Y. Kondo, H. Takeuchi, Ruthenium-doped semi-insulating InP buried InGaAIAs/InAIAs MQWs modulators, 13thIPRM May 2001, pp. 19-20.
D. Soderstrom et al., “Electrical Characterization of Ruthenium-Doped InP Grown by Low Pressure Hydride Vapor Phase Epitaxy”, Electrochemical and Solid-state Letters, 4(6) G53-G55 (2001).
D. Soderstrom et al., “Dopant Diffusion and Current-Voltage Studies on Epitaxial InP Codoped with Ru and Fe”, Journal of Electronic Materials, vol. 30, No. 8, pp. 972-976 (2001).
D. Soderstrom et al., Studies on Ruthenium-Doped InP Growth by Low-Pressure Hydride Vapor-Phase Epitaxy, Journal of Electrochemical Society, 148 (7) G375-G378 (2001).
A. Dadgar et al., “Ruthenium: A superior compensator of InP”, Applied Physics Letters, vol. 73, No. 26, Dec. 1998, pp. 3878-3880.
A. Dadgar et al., “Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition,”, Journal of Crystal Growth 195 (1998), pp. 69-73.
A. van Geelen et al., “Ruthenium Doped High Power 1.48 μm Sipbh Laser”, 11thInternational Conference on Indium Phosphide and Related Materials, May 1999, pp. 203-206.
Iga Ryuzo
Kondo Susumu
Kondo Yasuhiro
Noguchi Yoshio
Ogasawara Matsuyuki
Kenyon & Kenyon
Nippon Telegraph and Telephone Corporation
Sarkar Asok Kumar
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