Semiconductor optical device and method of fabricating the same

Details Semiconductor optical device and method of fabricating the same Semiconductor optical device and method of fabricating the same

2009-03-30

2011-10-18

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C372S045010, C372S046010, C257SE21002, C257S615000

Reexamination Certificate

active

08039282

ABSTRACT:
In a method of fabricating a semiconductor optical device, a semiconductor region is formed by growing an InP lower film, a active region, an InP upper film and a capping film on a substrate sequentially. Material of the capping film is different from that of InP. Next, a mask is formed on the capping film, and the semiconductor region is etched using the mask to form a semiconductor stripe mesa, which includes an InP lower cladding layer, a active layer, an InP upper cladding layer and a capping layer. The active layer comprises aluminum-based III-V compound. A width of the top surface of the capping layer is greater than that of a width of the bottom surface of the capping layer. A width of the top surface of the InP upper cladding layer is smaller than that of the bottom surface of the InP upper cladding layer. The minimum width of the semiconductor mesa is in the InP upper cladding layer. After forming the semiconductor stripe mesa, thermal process of the semiconductor mesa is carried out in an atmosphere to form a mass transport semiconductor on a side of the InP upper cladding layer, and the atmosphere contains V-group material.

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