Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-10-09
2007-10-09
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S039000, C438S694000, C438S725000
Reexamination Certificate
active
11031003
ABSTRACT:
In a dry etching step for an organic material film, a fluorine-containing member is disposed to the periphery of a semiconductor substrate disposed on a lower electrode or a tray for wafer transportation to form fluorine (fluoro-radicals) from the member per se in addition to the fluoric gas added to the etching gas, with a purpose of removing reaction products, thereby removing reaction products deposited on the semiconductor substrate efficiently and stably.
REFERENCES:
patent: 4482419 (1984-11-01), Tsukada et al.
patent: 6773945 (2004-08-01), Yamada
patent: 6828243 (2004-12-01), Denpoh
patent: 3-177020 (1991-08-01), None
Motoda Katsuya
Sakuma Yasushi
Uchida Kenji
Washino Ryu
Lee Hsien-Ming
OpNext Japan, Inc.
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