Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1995-08-17
1997-10-14
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257187, 257462, 257466, H01L 3300, H01L 3100
Patent
active
056775512
ABSTRACT:
A photodetection device includes a collector layer, a collector electrode connected electrically to the collector layer, a base layer free from a junction region for contacting with an electrode, an emitter layer including at least two, mutually separated emitter regions; and at least two emitter electrodes provided respectively on the emitter regions, wherein the base layer is exposed optically to an external optical radiation.
REFERENCES:
patent: 3593067 (1971-07-01), Flynn
patent: 5461245 (1995-10-01), Gribnikov et al.
patent: 5561306 (1996-10-01), Imamura et al.
Imamura Kenichi
Yokoyama Naoki
Fujitsu Limited
Mintel William
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