Semiconductor optical device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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Details

C257S094000, C257S098000, C257SE33027, C257SE33069, C438S029000

Reexamination Certificate

active

07838893

ABSTRACT:
A semiconductor optical device comprises a first conductive type semiconductor region, an active layer provided on the second semiconductor portion of the first conductive type semiconductor region, a second conductive type semiconductor region on the side and top of the active layer, the side of the second semiconductor portion, and the second region of the first semiconductor portion of the first conductive type semiconductor region, a potential adjusting semiconductor layer provided between the second semiconductor portion of the first conductive type semiconductor region and the active layer, and first and second distributed Bragg reflector portions between which the first conductive type semiconductor region, the active layer and the second conductive type semiconductor region is provided. Bandgap energies of the first conductive type semiconductor region and second conductive type semiconductor region are greater than that of the active layer. The second region of the first semiconductor portion of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. A bandgap energy of the potential adjusting semiconductor layer is different from bandgap energies of the first conductive type semiconductor region and the second conductive type semiconductor region.

REFERENCES:
patent: 4317085 (1982-02-01), Burnham et al.
patent: 5289018 (1994-02-01), Okuda et al.
patent: 5621748 (1997-04-01), Kondo et al.
patent: 5793788 (1998-08-01), Inaba et al.
patent: 6277696 (2001-08-01), Carey et al.
patent: 6570898 (2003-05-01), Bour et al.
patent: 6875627 (2005-04-01), Bour et al.
patent: 6891202 (2005-05-01), Kish et al.
patent: 2002/0094003 (2002-07-01), Bour et al.
patent: 2003/0053505 (2003-03-01), Bour et al.
patent: 59-129473 (1984-07-01), None
patent: 1-120883 (1989-05-01), None
patent: 03-020724 (1991-01-01), None
patent: 7-312462 (1995-11-01), None
patent: 11-87836 (1999-03-01), None
patent: 2001-111172 (2001-04-01), None
patent: 2004-111743 (2004-04-01), None
Nelson, et, “CW Electrooptical Properties of . . . ”, IEEE Journal of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981, pp. 202-207.
Osinski, et al, “Treshold Current Analysis of . . . ”, IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 1576-1585.
U.S. Appl. No. 11/230,926, filed Sep. 21, 2005, Katsuyama, et al.
Notification of Reasons of Rejection with English translation dated Jan. 6, 2009.

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