Semiconductor optical device

Details Semiconductor optical device Semiconductor optical device

2007-09-18

2007-09-18

Hoang, Quoc (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S094000, C257SE21188, C438S047000

Reexamination Certificate

active

11210110

ABSTRACT:
In a semiconductor optical device, a first conductive type semiconductor region includes first and second semiconductor portions. The first and second semiconductor portions are made of nitride mixed semiconductor crystal. This first semiconductor portion has a first region and a second region. The second semiconductor portion is provided on the first region of the first semiconductor portion. A second conductive type semiconductor region is made of nitride mixed semiconductor crystal. The second conductive type semiconductor region includes a first region and a second region. This second region of the first semiconductor portion of the first conductive type semiconductor region and the second region of the second conductive type semiconductor region constitute a pn junction. The sides of the second semiconductor portion of the first conductive type semiconductor region and the second region of the second conductive type semiconductor region constitute a pn junction. An active layer is made of nitride mixed semiconductor crystal the active layer is provided between the second semiconductor portion of the first conductive type semiconductor region and the first region of the second conductive type semiconductor region. The bandgap energies of the first conductive type semiconductor region and the second conductive type semiconductor region are greater than that of the active layer.

REFERENCES:
patent: 6984850 (2006-01-01), Nakatsu et al.
patent: 03-020724 (1991-01-01), None
Ronald J. Nelson, et al., “CW Electrooptical Properties of InGaAsP (λ=1.3 μm) Buried-Heterostructure Lasers”, IEEE Journal of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981.
Julian S. Osinski, et al., “Threshold Current Analysis of Compressive Strain (0-18%) in Low-Threshold, Long-Wavelength Quantum Well Lasers”, IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993.

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