Semiconductor optical device

Details Semiconductor optical device Semiconductor optical device

2005-11-29

2005-11-29

Healy, Brian (Department: 2883)

Optical waveguides

Planar optical waveguide

Thin film optical waveguide

C372S045013, C257S049000, C257S091000, C428S213000

Reexamination Certificate

active

06970633

ABSTRACT:
A semiconductor optical device includes a waveguide layer and a reflecting multi-layer film. The waveguide layer includes two cladding layers and an active layer sandwiched between the two cladding layers. The reflecting multi-layer film including multiple layers is on at least one of a pair of opposing end faces of the waveguide layer. A summation Σnidiof products nidiof refractive indexes niand thicknesses diof the layers denoted i in the reflecting multi-layer film, and a wavelength λ0of light guided through the waveguide layer satisfies a relationship, Σnidi>λ0/4. A first wavelength bandwidth Δλ is wider than a second wavelength bandwidth ΔΛ. Δλ is a wavelength range including the wavelength λ0in which a reflectance R of the reflecting multi-layer film is not higher than +2.0% from reflectance R at the wavelength λ0. ΔΛ is a wavelength range including the wavelength λ0in which a reflectance R′ of a hypothetical layer is not higher than +2.0% from a hypothetical reflectance R′ at the wavelength λ0of a hypothetical layer having a thickness of 5λ0/(4nf), a refractive index nf, on the at least one of opposing end faces, and satisfying a relationship, R′=((nc−nf2)/(nc+nf2))2, where ncdenotes an effective refractive index of the waveguide layer.

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Ladany, I. et al.; “Scandium oxide antireflection coatings for superluminescent LEDs”,Applied Optics, vol. 25, No. 4, pp. 472-473, (Feb. 15, 1986).

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