Semiconductor optical device

Details Semiconductor optical device Semiconductor optical device

2008-01-29

2008-01-29

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S097000, C257SE33027

Reexamination Certificate

active

07323722

ABSTRACT:
In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active layer has a pair of side surfaces. A second conductive type semiconductor region is provided on the sides and top of the active layer, and the second region of the first conductive type semiconductor region. The bandgap energy of the first conductive type semiconductor region is greater than that of the active layer. The bandgap energy of the second conductive type semiconductor region is greater than that of the active layer. The second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.

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Nelson et al. “CW Electrooptical Properties of InGaAsP (λ=1.3 μm) Buried-Heterostructure Lasers”, IEEE Journal of Quantum Electronics, Vo. QE-17, No. 2, Feb. 1981, p. 202-207.

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