Semiconductor optical component

Details Semiconductor optical component Semiconductor optical component

2005-09-13

2005-09-13

Harvey, MinSun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046012

Reexamination Certificate

active

06944198

ABSTRACT:
The laser type semiconductor optical component comprises: a semiconductor material substrate, a bottom cladding layer containing n-type carriers, an active layer forming one of more quantum wells, and a top cladding layer containing p-type carriers. To increase the emission power of the laser without increasing the vertical divergence of the beam, the bottom cladding layer has a higher refractive index than the top cladding layer. The lasers for pumping optical fiber amplifiers.

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Inoguchi K et al: “Operation of 780 NM ALGAAS Distributed Feedback Lasers at 100 DEG C with Low-Loss Waveguide Structure” Japanese Journal of Applied Physics, Publication Office Japanese Journal of Applied Physics. Tokyo, JP, vol. 33, No. 1B, Part 1, 1994, pp. 852-855, XP000596434, Jan. 1994.
Lelong I O et al: “A pulsed High-Power Quantum Well Laser Using an Asymmetric Waveguide” Semiconductor Science and Technology, Institute of Physics. London, GB, vol. 11, No. 4, Apr. 1, 1996, pp. 568-570, XP000586930.

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