Semiconductor optical amplifying device, semiconductor...

Details Semiconductor optical amplifying device, semiconductor... Semiconductor optical amplifying device, semiconductor...

2008-04-30

2010-12-28

Bolda, Eric (Department: 3663)

Optical: systems and elements

Optical amplifier

Particular active medium

C372S045010, C372S045011, C372S045012

Reexamination Certificate

active

07859745

ABSTRACT:
A polarization-independent SOA having an InP substrate used as a semiconductor substrate, and an active layer taking an MQW structure formed of a barrier layer made of GaInAs with tensile strain applied thereto and a well layer made of GaInNAs with no strain applied thereto alternately laminated in a plurality of layers, here, four layers of the well layer and five layers of the barrier layer are alternately laminated, is proposed.

REFERENCES:
patent: 5488507 (1996-01-01), Nishimura
patent: 6195188 (2001-02-01), Sekiguchi
patent: 6288410 (2001-09-01), Miyazawa
patent: 6487007 (2002-11-01), Morito
patent: 6614822 (2003-09-01), Yoshida et al.
patent: 6803604 (2004-10-01), Takahashi et al.
patent: 7109526 (2006-09-01), Gentner et al.
patent: 2002/0067541 (2002-06-01), Morito
patent: 2002/0179929 (2002-12-01), Takahashi et al.
patent: 2004/0135136 (2004-07-01), Takahashi et al.
patent: 2006/0054899 (2006-03-01), Takahashi et al.
patent: 2007/0241344 (2007-10-01), Adachi et al.
patent: 2009/0122393 (2009-05-01), Morito et al.
patent: 7-106712 (1995-04-01), None
patent: 8-95094 (1996-04-01), None
patent: 10-333199 (1998-12-01), None
patent: 2000-252588 (2000-09-01), None
patent: 2001-53392 (2001-02-01), None
patent: 2003-202529 (2003-07-01), None
patent: 2005-175021 (2005-06-01), None
Okamoto et al. “TM Mode Gain Enhancement in GaInAs-InP Lasers with Tensile Strined-Layer Superlattice”, IEEE Journal of Quantum Electronics, vol. 27, No. 6, pp. 1463-1469, (1991).
European Search Report dated Oct. 17, 2008, issued in corresponding European Patent Application No. 08155511.2.
Ken Morito et al; “High-Output-Power Polarization-Insensitive Semiconductor Optical Amplifer,” Journal of Lightwave Technology; vol. 21; No. 1; Jan. 2003; pp. 176-181.
S. Tanaka et al; “Record high saturation output power (+20 dBm) and low NF (6.0 dB) polarisation-insensitive MQW-SOA module,” Electronics Letters; Aug. 31, 2006; vol. 42; No. 18; pp. 1059-1060.
Katsuaki Magari et al; “Polarization-Insensitive Optical Amplifier with Tensile-Strained-Barrier MQW Structure,” IEEE Journal of Quantum Electronics; vol. 30; No. 3; Mar. 1994; pp. 695-702.
Japanese Office Action dated Aug. 4, 2009, issued in corresponding Japanese Patent Application No. 2007-159447.

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