Semiconductor optical amplifier with wideband electrical respons

Optical: systems and elements – Optical amplifier – Particular resonator cavity

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372 49, 357 30, H01S 308

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active

051190397

ABSTRACT:
A semiconductor optical amplifier includes an active region having facets at opposite ends thereof which define an optical cavity having maximum optical gain at a gain peak wavelength .lambda..sub.pk. An antireflection coating on each of the facets has a wavelength .lambda..sub.min of minimum reflectivity that is separated in wavelength from the gain peak wavelength, preferably by about 5 to 30 nanometers. The optical amplifier is operated at a bias current greater than a stimulated emission threshold bias current of the device. The input optical signal has a wavelength at or near the wavelength .lambda..sub.min of minimum reflectivity of the antireflection coatings. The optical amplifier has an electrical bandwidth on the order of 1 to 10 GHz.

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