Semiconductor optical amplifier having reduced polarization depe

Details Semiconductor optical amplifier having reduced polarization depe Semiconductor optical amplifier having reduced polarization depe

1994-09-15

1996-01-30

Hellner, Mark

Optical: systems and elements

Optical amplifier

Particular active medium

257 18, 372 45, G02F 0200

Patent

active

054885078

ABSTRACT:
A semiconductor optical amplifier comprises a substrate and an active layer constructed as a quantum well structure. The active layer includes a plurality of well layers and a plurality of barrier layers which are alternately layered. The composition of each well layer is such that the well layers have different quantum levels. The barrier layers are subjected to biaxial strain to shift the energy band structures so as to eliminate the polarization dependency of optical gain in the active region.

REFERENCES:
patent: 4952792 (1990-08-01), Caridi
patent: 5090790 (1992-02-01), Zucker
patent: 5117469 (1992-05-01), Cheung et al
patent: 5296721 (1994-03-01), Schulman et al
M. A. Newkirk et al., `1.5 um Multiquantum-Well Semiconductor Optical Amplifier with Tensile and Compressively Strained Wells for Polarization-Independent Gain`, IEEE Photonics Technology Letters, vol. 5, No. 4, Apr. 1993, New York, US, pp. 406-408, XP368317.
A. Mathur et al., `Polarization Insensitive Strained Quantum Well Gain Medium for Lasers and Optical Amplifiers`, Applied Physics Letters, vol. 61, No. 24, 14 Dec. 1992, New York, US, pp. 2845-2847, XP335086.
K. Magari et al., `1.55 um Polarization-Insensitive High-Gain Tensile-Strained-Barrier MOW Optical Amplifier`, IEEE Photonics Technology Letters, vol. 3, No. 11, Dec. 1991, New York, US, pp. 998-1000, XP232692.
M. Joma et al., `Polarization Insensitive Semiconductor Laser Amplifiers with Tensile Strained InGaAsP/InGaAsP Multiple Quantum Well Structure`, Applied Physics Letters, vol. 62, No. 2, 11 Jan. 1993, New York, US, pp. 121-122, XP332224.

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