Semiconductor optical amplifier device amplifying external...

Optical: systems and elements – Optical amplifier – Particular active medium

Reexamination Certificate

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C359S336000, C372S045013

Reexamination Certificate

active

07864412

ABSTRACT:
An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.

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Tsurusawa et al. “New method for reduction of carrier lifetime in semiconductor optical amplifier using assist light”, Japanese Journal of Applied Physics, vol. 38, pp. 1265-1268 Part 1 No. 2B (Feb. 1999).
Munroe et al.,“Spectral Broadening of Stochastic Light Intensity-Smoothed by a Saturated Semiconductor Optical Amplifier”, IEEE Journal of Quantum Electronics vol. 34, No. 3, pp. 548-551 (Mar. 1998).

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