Semiconductor optical amplifier device amplifying an...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S214100, C359S344000, C359S333000

Reexamination Certificate

active

11217590

ABSTRACT:
A semiconductor optical amplifier device includes an active layer, an n-type InP substrate, an n-type InP clad layer, a p-type InP clad layer, p-electrodes and n-electrodes. The active layer is made of, e.g., InGaAsP, and includes a saturable absorption region and optical amplification regions. A common modulated current is injected into each optical amplification region through the p-electrode. A modulated current is injected into the saturable absorption region through the p-electrode independently of the optical amplification region. The active layer receives injection light produced by adding additional noise light to an externally applied light signal, and emits output light produced by amplifying the injection light.

REFERENCES:
patent: 3828231 (1974-08-01), Yamamoto
patent: 5283799 (1994-02-01), Jacquet et al.
patent: 6104850 (2000-08-01), Dong
patent: 6205161 (2001-03-01), Kappeler
patent: 2004/0156643 (2004-08-01), Frederiksen et al.
patent: 05-507156 (1993-10-01), None
patent: 09-275224 (1997-10-01), None
patent: 2004-214407 (2004-07-01), None
patent: 2004-214603 (2004-07-01), None
patent: WO-91/17474 (1991-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor optical amplifier device amplifying an... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor optical amplifier device amplifying an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor optical amplifier device amplifying an... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3736168

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.