Optical: systems and elements – Optical amplifier – Particular active medium
Reexamination Certificate
2006-02-24
2009-06-02
Bolda, Eric (Department: 3663)
Optical: systems and elements
Optical amplifier
Particular active medium
C372S045011, C372S045012, C438S604000
Reexamination Certificate
active
07542201
ABSTRACT:
A semiconductor optical amplification device is disclosed that has a gain spectrum of a wide bandwidth. The semiconductor optical amplification device includes an InP substrate and an active layer on the InP substrate. The active layer has a quantum well structure formed by alternately stacking a barrier layer and a well layer, the barrier layer is formed from a tensile-strained InGaAs film, and the well layer is formed from a compressively-strained InGaAs film.
REFERENCES:
patent: 5151818 (1992-09-01), Thijs et al.
patent: 5253264 (1993-10-01), Suzuki et al.
patent: 6229152 (2001-05-01), Dries et al.
patent: 6765238 (2004-07-01), Chang et al.
patent: 2004/0196540 (2004-10-01), Lealman et al.
patent: 2005/0041708 (2005-02-01), Fujishiro et al.
patent: 07263812 (1995-10-01), None
patent: 8-95094 (1996-04-01), None
patent: 09298338 (1997-11-01), None
patent: 10190143 (1998-07-01), None
patent: 10242571 (1998-09-01), None
patent: 2000-101199 (2000-04-01), None
Madelung (editor), Semiconductors—Basic Data, 2nd revised Edition, Spinger-Verlag, Berlin, pp. 104, 127, 136, & 151 (1996).
Jeong et al., “Analysis and assessment of the gain of optically pumped surface-normal optical amplifiers,” Optics Communications, vol. 136, No. 4, Feb. 15, 1997.
Spiekman et al., “All-Optical Mach-Zehnder wavelength converter with monolithically integrated DFB probe source,” IEEE Photonics Technology Letters, vol. 9, No. 10, Oct. 1997, 3 pp.
K. Magari et al., “Polarization-Insensitive Optical Amplifier with Tensile-Strained-Barrier MQW Structure,” IEEE Journal of Quantum Electronics, vol. 30, No. 3, Mar. 1994, pp. 695-702.
A. Godefroy et al., “1.55-μm Polarization-Insensitive Optical Amplifier with Strain-Balanced Superlattice Active Layer,” IEEE Photonics Technology Letters, vol. 7, No. 5, May 1995, pp. 473-475.
A. Ougazzaden et al., Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier, Electronics letters, vol. 31, No. 15, Jul. 1995, pp. 1242-1244.
Seoijin Park et al., “Semiconductor Optical Amplifier for CWDM Operating Over 1540-1620 nm,” IEEE Photonics Technology Letters, vol. 17, No. 5, May 2005, pp. 980-982.
Ken Morito et al., “High-Output-Power Polarization-Insensitive Semiconductor Optical Amplifier,” Journal of Lightwave Technology, vol. 21, No. 1, Jan. 2003, pp. 176-181.
Morito Ken
Tanaka Shinsuke
Bolda Eric
Fujitsu Limited
Kratz, Quintos & Hanson, LLP.
LandOfFree
Semiconductor optical amplification device and optical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor optical amplification device and optical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor optical amplification device and optical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4147970