Semiconductor-on-insulator type heterostructure and method...

Details Semiconductor-on-insulator type heterostructure and method... Semiconductor-on-insulator type heterostructure and method...

2006-01-05

2009-02-03

Smith, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S455000, C438S458000, C438S471000, C438S473000, C438S475000, C438S476000, C438S480000, C438S514000, C438S515000, C438S522000, C438S526000, C438S527000, C438S528000, C438S530000, C438S558000, C438S795000, C438S799000, C438S974000

Reexamination Certificate

active

07485551

ABSTRACT:
The present invention relates to a method of fabricating a semiconductor-on-insulator-type heterostructure that includes at least one insulating layer interposed between a receiver substrate of semiconductor material and an active layer derived from a donor substrate of semiconductor material. The method includes the steps of bonding and active layer transfer. Prior to bonding, an atomic species which is identical or isoelectric with the insulating layer material is implanted in the insulating layer. The implantation forms a trapping layer, which can retain gaseous species present in the various interfaces of the heterostructure, thereby limiting formation of defects on the surface of the active layer.

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